1
Transistor
2SD966
Silicon NPN epitaxial planer type
For low-frequency power amplification
For stroboscope
s
Features
q
Low collector to emitter saturation voltage V
CE(sat)
.
q
Satisfactory operation performances at high efficiency with the
low-voltage power supply.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
EIAJ:SC51
TO92L Package
5.9
0.2
2.54
0.15
0.7
0.1
4.9
0.2
8.6
0.2
0.7
+0.3
0.2
13.5
0.5
3.2
0.45
+0.2
0.1
1.27
1.27
0.45
+0.2
0.1
1
3
2
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
40
20
7
8
5
1
150
55 ~ +150
Unit
V
V
V
A
A
W
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
V
CEO
V
EBO
h
FE1
*1
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
*2
V
CE
= 2V, I
C
= 2A
*2
I
C
= 3A, I
B
= 0.1A
*2
V
CB
= 6V, I
E
= 50mA, f = 200MHz
V
CB
= 20V, I
E
= 0, f = 1MHz
min
20
7
230
150
typ
150
max
0.1
0.1
600
1
50
Unit
A
A
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank
Q
R
h
FE1
230 ~ 380
340 ~ 600
*2
Pulse measurement
2
Transistor
2SD966
P
C
-- Ta
I
C
-- V
CE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
0
160
40
120
80
140
20
100
60
0
1.2
1.0
0.8
0.6
0.4
0.2
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
2.4
2.0
1.6
0.4
1.2
0.8
0
2.4
2.0
1.6
1.2
0.8
0.4
Ta=25C
I
B
=7mA
6mA
5mA
4mA
3mA
2mA
1mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0
2.0
1.6
0.4
1.2
0.8
0
6
5
4
3
2
1
V
CE
=2V
Ta=75C
25C
25C
Base to emitter voltage V
BE
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=30
Ta=75C
25C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0
600
500
400
300
200
100
Ta=75C
25C
25C
V
CE
=2V
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.01
0.1
1
10
0.03
0.3
3
0
400
300
100
250
350
200
50
150
V
CB
=6V
Ta=25C
Emitter current I
E
(A)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
100
80
60
40
20
I
E
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
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